FREQUENCY AND TEMPERATURE DEPENDENCE OF C-V CHARACTERISTICS AT GE-SIO2 INTERFACE AND BT TREATMENTS

被引：7

作者：

YASHIRO, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1970年 / 9卷 / 07期

关键词：

D O I：

10.1143/JJAP.9.740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：740 / &

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