INSTABILITIES OF MOS STRUCTURE

被引：18

作者：

MIURA, Y

MATUKURA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1967年 / 6卷 / 05期

关键词：

D O I：

10.1143/JJAP.6.582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：582 / &

共 10 条

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[2]

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BURKHARDT, PJ ;

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MIURA, Y ;

MATUKURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (02) :180-&

[7] ELECTROCHEMICAL PHENOMENA IN THIN FILMS OF SILICON DIOXIDE ON SILICON [J].

SERAPHIM, DP ;

BRENNEMANN, AE ;

FRIEDMAN, HL ;

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :400-+

[8] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].

SNOW, EH ;

GROVE, AS ;

DEAL, BE ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1664-&

[9] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES [J].

TERMAN, LM .

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[10] SPACE-CHARGE MODEL FOR SURFACE POTENTIAL SHIFTS IN SILICON PASSIVATED WITH THIN INSULATING LAYERS [J].

THOMAS, JE ;

YOUNG, DR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :368-+

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