GROWTH OF AMORPHOUS-GERMANIUM NITRIDE FILMS BY INDIRECT-PLASMA ENHANCED CVD

被引:11
作者
ALFORD, DB
MEINERS, LG
机构
关键词
D O I
10.1149/1.2100608
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:979 / 980
页数:2
相关论文
共 9 条
[1]  
IWANCHI S, 1971, JPN J APPL PHYS, V10, P260
[2]   RATES OF OXIDATION OF GERMANIUM [J].
LAW, JT ;
MEIGS, PS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (03) :154-159
[3]  
MEINERS LG, UNPUB
[4]   PREPARATION AND PROPERTIES OF AMORPHOUS GERMANIUM NITRIDE FILMS [J].
NAGAI, H ;
NIIMI, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) :671-&
[5]   DOMINANT SURFACE ELECTRONIC PROPERTIES OF SIO2-PASSIVATED GE SURFACES AS A FUNCTION OF VARIOUS ANNEALING TREATMENTS [J].
SEDGWICK, TO .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :5066-+
[6]   A NEW TECHNIQUE FOR GETTERING OXYGEN AND MOISTURE FROM GASES USED IN SEMICONDUCTOR PROCESSING [J].
SHEALY, JR ;
WOODALL, JM .
APPLIED PHYSICS LETTERS, 1982, 41 (01) :88-90
[7]  
WANG KL, 1976, J ELECTROCHEM SOC, V123, P1392, DOI 10.1149/1.2133083