INTERFACE PROPERTIES OF PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SIOXNY/N-GAAS METAL-INSULATOR-SEMICONDUCTOR SYSTEM

被引：5

作者：

CHOU, TY

LIN, MS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 11期

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D O I：

10.1063/1.336765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3778 / 3782

页数：5

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