EVIDENCE FOR MULTIPHONON EMISSION FROM INTERFACE STATES IN MOS STRUCTURES

被引：86

作者：

SCHULZ, M

JOHNSON, NM

机构：

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 25卷 / 07期

关键词：

D O I：

10.1016/0038-1098(78)90162-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：481 / 484

页数：4

共 11 条

[1] INTERFACE STATES IN SI-SIO2 INTERFACES [J].

DEULING, H ;

KLAUSMANN, E ;

GOETZBERGER, A .

SOLID-STATE ELECTRONICS, 1972, 15 (05) :559-+

[2] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

EASTMAN, DE ;

GROBMAN, WD .

PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&

[3] SPECTRUM AND NATURE OF SURFACE STATES [J].

FLIETNER, H .

SURFACE SCIENCE, 1974, 46 (01) :251-264

[4] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING [J].

GOETZBERGER, A ;

HEINE, V ;

NICOLLIAN, EH .

APPLIED PHYSICS LETTERS, 1968, 12 (03) :95-+

[5]

GOETZBERGER A, 1969, APPL SOL STATE SCI, P154

[6]

GOETZBERGER A, 1976, CRC CRITICAL REV, V1

[7] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[8] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION [J].

LANG, DV ;

HENRY, CH .

PHYSICAL REVIEW LETTERS, 1975, 35 (22) :1525-1528

[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[10] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022

← 1 2 →