METHOD FOR REDUCTION OF HYSTERESIS EFFECTS IN MIS MEASUREMENTS

[1] INTERPRETATION OF NONEQUILIBRIUM MEASUREMENTS ON MOS DEVICES USING THE LINEAR VOLTAGE RAMP TECHNIQUE [J]. SOLID-STATE ELECTRONICS, 1981, 24 (08) : 709 - 716

[2] FLIETNER H, 1983, LECT NOTES PHYS, V175, P247

[3] FRANKL DR, 1967, ELECTRICAL PROPERTIE

[4] METAL-NITRIDE-OXIDE-SILICON(MNOS) TRANSISTOR - CHARACTERISTICS AND APPLICATIONS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08): : 1207 - +

[5] DETERMINATION OF SURFACE PROPERTIES BY MEANS OF LARGE-SIGNAL PHOTOVOLTAGE PULSES AND INFLUENCE OF TRAPPING [J]. SURFACE SCIENCE, 1974, 44 (02) : 421 - 437

[6] INVESTIGATION OF ENERGETIC SURFACE-STATE DISTRIBUTIONS AT REAL SURFACES OF SILICON AFTER TREATMENT WITH HF AND H2O USING LARGE-SIGNAL PHOTO-VOLTAGE PULSES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (06) : 927 - 940

[7] THE INFLUENCE OF MOBILE IONS ON THE SI-SIO2 INTERFACE TRAPS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (08) : 773 - 780

[8] LAM YW, 1971, J PHYS D APPL PHYS, V4, P1370, DOI 10.1088/0022-3727/4/9/318

[9] METHOD OF SEPARATING HYSTERESIS EFFECTS FROM MIS CAPACITANCE MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 348 - 350

[10] ELECTRICAL CHARACTERISTICS AND MEMORY BEHAVIOR OF GE3N4-GAAS MIS DEVICES [J]. SOLID-STATE ELECTRONICS, 1982, 25 (02) : 145 - 149

[1] INTERPRETATION OF NONEQUILIBRIUM MEASUREMENTS ON MOS DEVICES USING THE LINEAR VOLTAGE RAMP TECHNIQUE [J]. SOLID-STATE ELECTRONICS, 1981, 24 (08) : 709 - 716

[2] FLIETNER H, 1983, LECT NOTES PHYS, V175, P247

[3] FRANKL DR, 1967, ELECTRICAL PROPERTIE

[4] METAL-NITRIDE-OXIDE-SILICON(MNOS) TRANSISTOR - CHARACTERISTICS AND APPLICATIONS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08): : 1207 - +

[5] DETERMINATION OF SURFACE PROPERTIES BY MEANS OF LARGE-SIGNAL PHOTOVOLTAGE PULSES AND INFLUENCE OF TRAPPING [J]. SURFACE SCIENCE, 1974, 44 (02) : 421 - 437

[6] INVESTIGATION OF ENERGETIC SURFACE-STATE DISTRIBUTIONS AT REAL SURFACES OF SILICON AFTER TREATMENT WITH HF AND H2O USING LARGE-SIGNAL PHOTO-VOLTAGE PULSES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (06) : 927 - 940

[7] THE INFLUENCE OF MOBILE IONS ON THE SI-SIO2 INTERFACE TRAPS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (08) : 773 - 780

[8] LAM YW, 1971, J PHYS D APPL PHYS, V4, P1370, DOI 10.1088/0022-3727/4/9/318

[9] METHOD OF SEPARATING HYSTERESIS EFFECTS FROM MIS CAPACITANCE MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 348 - 350

[10] ELECTRICAL CHARACTERISTICS AND MEMORY BEHAVIOR OF GE3N4-GAAS MIS DEVICES [J]. SOLID-STATE ELECTRONICS, 1982, 25 (02) : 145 - 149