THE INFLUENCE OF MOBILE IONS ON THE SI-SIO2 INTERFACE TRAPS

[1] DEAL BE, 1974, J ELECTROCHEM SOC, V121, P198

[2] MEASUREMENT OF LOW DENSITIES OF SURFACE STATES AT SI-SIO2-INTERFACE [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1451 - 1460

[3] ROOM-TEMPERATURE CONDUCTIVITY AND LOCATION OF MOBILE SODIUM IONS IN THERMAL SILICON DIOXIDE LAYER OF A METAL-SILICON DIOXIDE-SILICON STRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5149 - 5151

[4] CAPTURE OF ELECTRONS INTO NA+-RELATED TRAPPING SITES IN SIO2 LAYER OF MOS STRUCTURES AT 77 DEGREESK [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2740 - 2743

[5] FORMATION OF SURFACE STATES DURING STRESS AGING OF THERMAL SI-SIO2 INTERFACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 90 - 96

[6] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING [J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 95 - +

[7] GOETZBERGER A, 1976, SOLID ST SCI

[8] GOETZBERGER A, COMMUNICATION

[9] GRUTHANER FJ, 1980, PHYSICS MOS INSULATO, P290

[10] MOBILITY OF POTASSIUM-IONS IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4834 - 4837

[1] DEAL BE, 1974, J ELECTROCHEM SOC, V121, P198

[2] MEASUREMENT OF LOW DENSITIES OF SURFACE STATES AT SI-SIO2-INTERFACE [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1451 - 1460

[3] ROOM-TEMPERATURE CONDUCTIVITY AND LOCATION OF MOBILE SODIUM IONS IN THERMAL SILICON DIOXIDE LAYER OF A METAL-SILICON DIOXIDE-SILICON STRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5149 - 5151

[4] CAPTURE OF ELECTRONS INTO NA+-RELATED TRAPPING SITES IN SIO2 LAYER OF MOS STRUCTURES AT 77 DEGREESK [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2740 - 2743

[5] FORMATION OF SURFACE STATES DURING STRESS AGING OF THERMAL SI-SIO2 INTERFACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 90 - 96

[6] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING [J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 95 - +

[7] GOETZBERGER A, 1976, SOLID ST SCI

[8] GOETZBERGER A, COMMUNICATION

[9] GRUTHANER FJ, 1980, PHYSICS MOS INSULATO, P290

[10] MOBILITY OF POTASSIUM-IONS IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4834 - 4837