INTERPRETATION OF NONEQUILIBRIUM MEASUREMENTS ON MOS DEVICES USING THE LINEAR VOLTAGE RAMP TECHNIQUE

被引：8

作者：

FARAONE, L

SIMMONS, JG

AGARWALS, AK

TONNER, PD

机构：

[1] LEHIGH UNIV, SIMON FAIRCHILD LAB, BETHLEHEM, PA 18015 USA

[2] UNIV TORONTO, DEPT ELECT ENGN, TORONTO M5S 1A4, ONTARIO, CANADA

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 08期

关键词：

D O I：

10.1016/0038-1101(81)90050-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：709 / 716

页数：8

共 11 条

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[10]

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