NONEQUILIBRIUM RESPONSE OF MOS DEVICES TO A LINEAR VOLTAGE RAMP .1. BULK DISCRETE TRAPS

被引:24
作者
BOARD, K [1 ]
SIMMONS, JG [1 ]
机构
[1] UNIV WALES,UNIV COLL SWANSEA,DEPT ELECT & ELECTR ENGN,SWANSEA SA2 8PP,W GLAMORGAN,WALES
关键词
D O I
10.1016/0038-1101(77)90175-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:859 / 867
页数:9
相关论文
共 5 条
[1]   ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].
HALL, RN .
PHYSICAL REVIEW, 1952, 87 (02) :387-387
[2]   A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].
KUHN, M .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+
[3]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
SHOCKLEY, W ;
READ, WT .
PHYSICAL REVIEW, 1952, 87 (05) :835-842
[4]   NON-STEADY-STATE BULK-GENERATION PROCESSES IN PULSED METAL-INSULATOR-SEMICONDUCTOR CAPACITORS [J].
SIMMONS, JG ;
WEI, LS .
SOLID-STATE ELECTRONICS, 1976, 19 (02) :153-158
[5]  
SZE SM, 1969, PHYSICS SEMICONDUCTO