NON-STEADY-STATE BULK-GENERATION PROCESSES IN PULSED METAL-INSULATOR-SEMICONDUCTOR CAPACITORS

被引：31

作者：

SIMMONS, JG

WEI, LS

机构：

[1] UNIV TORONTO, DEPT ELECT ENGN, TORONTO M5S 1A5, ONTARIO, CANADA

[2] UNIV TORONTO, MAT RES CTR, TORONTO M5S 1A5, ONTARIO, CANADA

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 02期

关键词：

D O I：

10.1016/0038-1101(76)90095-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：153 / 158

页数：6

共 29 条

[1] RECOMBINATION IN SEMICONDUCTORS [J].

BEMSKI, G .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :990-1004

[2]

CLARKE DH, 1957, J ELECTRON CONTR, V3, P375

[3] MINORITY CARRIER LIFETIME MEASUREMENT IN GOLD DOPED SILICON MOS STRUCTURES [J].

CLEMENT, G ;

VOOS, M .

SURFACE SCIENCE, 1968, 11 (01) :147-&

[4] EXPERIMENTAL STUDY OF SEMICONDUCTOR SURFACE CONDUCTIVITY [J].

GROSVALET, J ;

JUND, C ;

MOTSCH, C ;

POIRIER, R .

SURFACE SCIENCE, 1966, 5 (01) :49-+

[5] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[6] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J].

HEIMAN, FP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :781-+

[7] MINORITY CARRIER LIFETIME DETERMINATION FROM INVERSION LAYER TRANSIENT RESPONSE [J].

HOFSTEIN, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :785-+

[8] CARRIER CONCENTRATION AND MINORITY CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR EPITAXIAL LAYERS BY MOS CAPACITANCE METHOD [J].

JUND, C .

SOLID-STATE ELECTRONICS, 1966, 9 (04) :315-&

[9] TRANSIENT RESPONSES OF A PULSED MIS-CAPACITOR [J].

MULLER, J ;

SCHIEK, B .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1319-&

[10] DIFFERENT MECHANISMS AFFECTING INVERSION LAYER TRANSIENT RESPONSE [J].

PREIER, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :990-+

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