METHOD OF SEPARATING HYSTERESIS EFFECTS FROM MIS CAPACITANCE MEASUREMENTS

被引：26

作者：

NAKAGAWA, T ^{[1
]}

FUJISADA, H ^{[1
]}

机构：

[1] ELECTROTECHN LAB,TANASHI,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 05期

关键词：

D O I：

10.1063/1.89695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：348 / 350

页数：3

共 9 条

[1] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J].

CHU, TL ;

SZEDON, JR ;

LEE, CH .

SOLID-STATE ELECTRONICS, 1967, 10 (09) :897-&

[2] CHARACTERISTICS AND POTENTIAL APPLICATIONS OF GAAS1-XPX MIS STRUCTURES [J].

FORBES, L ;

YEARGAN, JR ;

KEUNE, DL ;

CRAFORD, MG .

SOLID-STATE ELECTRONICS, 1974, 17 (01) :25-29

[3] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES [J].

HASEGAWA, H ;

FORWARD, KE ;

HARTNAGEL, HL .

APPLIED PHYSICS LETTERS, 1975, 26 (10) :567-569

[4] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].

HEIMAN, FP ;

WARFIELD, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&

[5]

ITO T, 1973, T I ELECTR ENG JPN A, V93, P55

[6] AN INP MIS DIODE [J].

LILE, DL ;

COLLINS, DA .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :554-556

[7] P-CHANNEL MOS-TRANSISTOR IN INDIUM-ANTIMONIDE [J].

SHAPPIR, J ;

KIDRON, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (10) :960-961

[8]

TERAO H, 1974, T I ELECTR ENG JPN C, V94, P75

[9] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES [J].

TERMAN, LM .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :285-299

← 1 →