P-CHANNEL MOS-TRANSISTOR IN INDIUM-ANTIMONIDE

被引：12

作者：

SHAPPIR, J ^{[1
]}

KIDRON, I ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,ELECT ENGN DEPT,HAIFA,ISRAEL

来源：

关键词：

D O I：

10.1109/T-ED.1975.18249

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：960 / 961

页数：2

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YEARGAN, JR ;

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WARFIELD, G .

[4]

KEYES R, 1974, IRIS SPECIALTY M IR

[5]

MARGALIT S, TO BE PUBLISHED

[6] MOSTS AT CRYOGENIC TEMPERATURES [J].

ROGERS, CG .

[7]

ROSENBERG AJ, 1962, COMPOUND SEMICONDUCT, pCH49

[8]

STECKL AJ, 1974, SEP P INT C CHARG CO, P256

[9] CHARACTERIZATION OF THIN OXIDE MNOS MEMORY TRANSISTORS [J].

WHITE, MH ;

CRICCHI, JR .