MOSTS AT CRYOGENIC TEMPERATURES

被引：56

作者：

ROGERS, CG

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 11期

关键词：

D O I：

10.1016/0038-1101(68)90130-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1079 / &

共 38 条

[1] DOUBLE DIFFUSED GALLIUM ARSENIDE TRANSISTORS [J].

BECKE, H ;

FLATLEY, D ;

STOLNITZ, D .

SOLID-STATE ELECTRONICS, 1965, 8 (03) :255-&

[2]

BOK J, 1960, PICSP, P138

[3] INJECTION AND TRANSPORT OF ADDED CARRIERS IN SILICON AT LIQUID-HELIUM TEMPERATURES [J].

BROWN, JM ;

JORDAN, AG .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :337-&

[4] THE THERMAL CONDUCTIVITY OF GERMANIUM AND SILICON BETWEEN 2-DEGREES-K AND 300-DEGREES-K [J].

CARRUTHERS, JA ;

GEBALLE, TH ;

ROSENBERG, HM ;

ZIMAN, JM .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 238 (1215) :502-514

[5]

COCKCROFT JD, 1927, J I ELEC ENGRS, V66, P385

[6] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J].

FANG, FF ;

HOWARD, WE .

PHYSICAL REVIEW LETTERS, 1966, 16 (18) :797-&

[7] THE THERMAL EXPANSION OF ALUMINIUM AT LOW TEMPERATURES AS MEASURED BY AN X-RAY DIFFRACTION METHOD [J].

FIGGINS, BF ;

JONES, GO ;

RILEY, DP .

PHILOSOPHICAL MAGAZINE, 1956, 1 (08) :747-758

[8] HIGH-FREQUENCY PROPERTIES OF EPITAXIAL SILICON P-N JUNCTIONS AT LOW TEMPERATURES [J].

FINK, HJ .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1883-&

[9] REVERSE RECOVERY TIME MEASUREMENTS OF EPITAXIAL SILICON P-N JUNCTIONS AT LOW TEMPERATURES [J].

FINK, HJ .

SOLID-STATE ELECTRONICS, 1964, 7 (11) :823-831

[10] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].

FOWLER, AB ;

FANG, FF ;

HOWARD, WE ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (20) :901-&

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