HIGH-FREQUENCY PROPERTIES OF EPITAXIAL SILICON P-N JUNCTIONS AT LOW TEMPERATURES

被引：1

作者：

FINK, HJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1964年 / 35卷 / 06期

关键词：

D O I：

10.1063/1.1713762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1883 / &

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