REVERSE RECOVERY TIME MEASUREMENTS OF EPITAXIAL SILICON P-N JUNCTIONS AT LOW TEMPERATURES

被引：9

作者：

FINK, HJ

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(64)90134-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：823 / 831

页数：9

共 19 条

BAKANOWSKI, AE ;

FORSTER, JH .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :87-104

FINK, HJ ;

RULISON, RL .

[3]

FINK HJ, 1964, J APPL PHYS JUN

[4] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[5]

IGLITSYNZ MI, 1960, RADIO ENG ELEC PHYS, V5, P215

[6]

KENNEDY DP, 1962, IRE T ELECTRON DEV, V9, P174

[7] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J].

KINGSTON, RH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05) :829-834

[8]

Ko W. H., 1961, IRE T ELECTRON DEV, V8, P123, DOI 10.1109/T-ED.1961.14719

[9]

KO WH, 1959, I RADIO ENG T ELECTR, V6, P341

[10] TRANSIENT RESPONSE OF A P-N JUNCTION [J].

LAX, B ;

NEUSTADTER, SF .