EPITAXIAL SILICON VARACTORS AT LOW TEMPERATURES + MICROWAVE FREQUENCIES

被引：4

作者：

FINK, HJ

RULISON, RL

机构：

来源：

关键词：

D O I：

10.1109/PROC.1964.2946

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：420 / &

共 7 条

[1]

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[2]

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[6] LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J].

POLLAK, M ;

GEBALLE, TH .

PHYSICAL REVIEW, 1961, 122 (06) :1742-&

[7]

SHOCKLEY W, 1949, BELL SYSTEM TECH J, V28, P389