共 38 条
[21]
ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON
[J].
PHYSICAL REVIEW,
1954, 96 (01)
:28-35
[24]
LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON
[J].
PHYSICAL REVIEW,
1961, 122 (06)
:1742-&
[25]
INDIUM ANTIMONIDE SUBMILLIMETER PHOTOCONDUCTIVE DETECTORS
[J].
APPLIED OPTICS,
1965, 4 (06)
:649-&
[27]
THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF SILICON
[J].
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON,
1958, 72 (464)
:193-200
[28]
ROGERS CA, TO BE PUBLISHED
[30]
SAH CT, 1964, IEEE T ELECTRON DEVI, V11, P406