A HIGH FIELD TRIODE

[1] ATALLA MM, 1963, Patent No. 3045129

[2] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (03): : 518 - 527

[3] GARRETT CGB, 1955, J APPL PHYS, V27, P299

[4] GREEN DH, TO BE PUBLISHED

[5] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[6] HOFSTEIN SR, PRIVATE COMMUNICATIO

[7] DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 423 - 430

[8] KAHNG D, 1960, SOLID STATE DEVICE R

[9] FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON [J]. PHYSICA STATUS SOLIDI, 1963, 3 (03): : 447 - 464

[10] BORON REDISTRIBUTION IN SILICON BY THERMAL OXIDATION [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2911 - &

[1] ATALLA MM, 1963, Patent No. 3045129

[2] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (03): : 518 - 527

[3] GARRETT CGB, 1955, J APPL PHYS, V27, P299

[4] GREEN DH, TO BE PUBLISHED

[5] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[6] HOFSTEIN SR, PRIVATE COMMUNICATIO

[7] DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 423 - 430

[8] KAHNG D, 1960, SOLID STATE DEVICE R

[9] FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON [J]. PHYSICA STATUS SOLIDI, 1963, 3 (03): : 447 - 464

[10] BORON REDISTRIBUTION IN SILICON BY THERMAL OXIDATION [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2911 - &