INSULATED GATE TUNNEL JUNCTION TRIODE

[1] ATALLA MM, 1962, Patent No. 3045139

[2] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1960, 118 (02): : 425 - 434

[3] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 106 (03): : 418 - 426

[4] HILIBRAND J, PRIVATE COMMUNICATIO

[5] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[6] HOFSTEIN SR, 1964, THESIS PRINCETON U, P17

[7] HOFSTEIN SR, TO BE PUBLISHED

[8] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1246 - 1249

[9] NATHANSON HC, 1963, OCT IEEE EL DEV M WA

[10] NATHANSON HI, PRIVATE COMMUNICATIO

[1] ATALLA MM, 1962, Patent No. 3045139

[2] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1960, 118 (02): : 425 - 434

[3] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1957, 106 (03): : 418 - 426

[4] HILIBRAND J, PRIVATE COMMUNICATIO

[5] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[6] HOFSTEIN SR, 1964, THESIS PRINCETON U, P17

[7] HOFSTEIN SR, TO BE PUBLISHED

[8] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1246 - 1249

[9] NATHANSON HC, 1963, OCT IEEE EL DEV M WA

[10] NATHANSON HI, PRIVATE COMMUNICATIO