THERMAL ANNEALING STUDY ON GAAS ENCAPSULATED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIOXNY

被引：12

作者：

CHAN, YJ ^{[1
]}

LIN, MS ^{[1
]}

CHEN, TP ^{[1
]}

机构：

[1] IND TECHNOL RES INST,MAT RES LAB,HSINCHU 300,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 01期

关键词：

D O I：

10.1063/1.335660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：545 / 549

页数：5

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