PROPERTIES AND THERMAL-STABILITY OF THE SIO2/GAAS INTERFACE WITH DIFFERENT SURFACE TREATMENTS

被引：17

作者：

PACCAGNELLA, A ^{[1
]}

CALLEGARI, A ^{[1
]}

BATEY, J ^{[1
]}

LACEY, D ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 03期

关键词：

D O I：

10.1063/1.104217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality SiO2 films were deposited by plasma-enhanced chemical vapor deposition on GaAs wafers which received different surface treatments. It was found that metal-oxide-semiconductor (MOS) capacitors which received surface nitridation were unstable under high-temperature anneal (600°C). These instabilities are interpreted in terms of free As precipitates at the interface. When, instead, a thin Si layer was deposited on the GaAs surface, stable interfaces were obtained at 600°C. These MOS capacitors appear to show both deep depletion and inversion.

引用

页码：258 / 260

页数：3

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