Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

被引：97

作者：

Hinkle, C. L. ^{[1
]}

Sonnet, A. M.

Vogel, E. M.

McDonnell, S.

Hughes, G. J.

Milojevic, M.

Lee, B.

Aguirre-Tostado, F. S.

Choi, K. J.

Kim, J.

Wallace, R. M.

机构：

[1] Univ Texas, Dept Elect Engn, Richardson, TX 75080 USA

[2] Dublin City Univ, Sch Phys Sci, Dublin, Ireland

[3] Univ Texas, Mat Sci Engn, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 16期

基金：

爱尔兰科学基金会;

关键词：

D O I：

10.1063/1.2801512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance frequency dispersion. In situ deposition and analysis techniques were used to study different surface preparations, including NH4OH, Si-flux, and atomic hydrogen exposures, as well as Si passivation depositions prior to in situ atomic layer deposition of Al2O3. As-O bonding was removed and a bond conversion process with Si deposition is observed. The accumulation capacitance frequency dispersion was removed only when a Si interlayer and a specific surface clean were combined. (C) 2007 American Institute of Physics.

引用

页数：3

共 20 条

[1] GaAs wafer bonding by atomic hydrogen surface cleaning [J].

Akatsu, T ;

Plössl, A ;

Stenzel, H ;

Gösele, U .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) :7146-7150

[2] ALLOYED OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807

[3] HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition -: art. no. 152904 [J].

Frank, MM ;

Wilk, GD ;

Starodub, D ;

Gustafsson, T ;

Garfunkel, E ;

Chabal, YJ ;

Grazul, J ;

Muller, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

[4] ACCUMULATION CAPACITANCE FOR GAAS-SIO2 INTERFACES WITH SI INTERLAYERS [J].

FREEOUF, JL ;

BACHANAN, DA ;

WRIGHT, SL ;

JACKSON, TN ;

ROBINSON, B .

APPLIED PHYSICS LETTERS, 1990, 57 (18) :1919-1921

[5] Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2x8)/(2x4) [J].

Hale, MJ ;

Yi, SI ;

Sexton, JZ ;

Kummel, AC ;

Passlack, M .

JOURNAL OF CHEMICAL PHYSICS, 2003, 119 (13) :6719-6728

[6] ELECTRICAL MODELING OF COMPOUND SEMICONDUCTOR INTERFACE FOR FET DEVICE ASSESSMENT [J].

HASEGAWA, H ;

SAWADA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1055-1061

[7] CONTROL OF COMPOUND SEMICONDUCTOR INSULATOR INTERFACES BY AN ULTRATHIN MOLECULAR-BEAM EPITAXY SI LAYER [J].

HASEGAWA, H ;

AKAZAWA, M ;

ISHII, H ;

MATSUZAKI, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :870-878

[8] Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 -: art. no. 252104 [J].

Huang, ML ;

Chang, YC ;

Chang, CH ;

Lee, YJ ;

Chang, P ;

Kwo, J ;

Wu, TB ;

Hong, M .

APPLIED PHYSICS LETTERS, 2005, 87 (25) :1-3

[9] Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si/SiO2 interlayers [J].

Koester, S. J. ;

Kiewra, E. W. ;

Sun, Yanning ;

Neumayer, D. A. ;

Ott, J. A. ;

Copel, M. ;

Sadana, D. K. ;

Webb, D. J. ;

Fompeyrine, J. ;

Locquet, J. -P. ;

Marchiori, C. ;

Sousa, M. ;

Germann, R. .

APPLIED PHYSICS LETTERS, 2006, 89 (04)

[10] Relative reactivity of arsenic and gallium dimers and backbonds during the adsorption of molecular oxygen on GaAs(100)(6x6) [J].

Kruse, P ;

McLean, JG ;

Kummel, AC .

JOURNAL OF CHEMICAL PHYSICS, 2000, 113 (20) :9217-9223

← 1 2 →