HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition -: art. no. 152904

被引:297
作者
Frank, MM [1 ]
Wilk, GD
Starodub, D
Gustafsson, T
Garfunkel, E
Chabal, YJ
Grazul, J
Muller, DA
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA
[2] ASM Amer, Phoenix, AZ 85034 USA
[3] Rutgers State Univ, Dept Phys, Piscataway, NJ 08854 USA
[4] Rutgers State Univ, Dept Chem, Piscataway, NJ 08854 USA
[5] Rutgers State Univ, Surface Modificat Lab, Piscataway, NJ 08854 USA
[6] Cornell Univ, Mat Res Ctr, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1899745
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-performance metal-oxide-semiconductor field effect transistors (MOSFETs) on III-V semiconductors have long proven elusive. High-permittivity (high-kappa) gate dielectrics may enable their fabrication. We have studied hafnium oxide and aluminum oxide grown on gallium arsenide by atomic layer deposition. As-deposited films are continuous and predominantly amorphous. A native oxide remains intact underneath HfO2 during growth, while thinning occurs during Al2O3 deposition. Hydrofluoric acid etching prior to growth minimizes the final interlayer thickness. Thermal treatments at similar to 600 degrees C decompose arsenic oxides and remove interfacial oxygen. These observations explain the improved electrical quality and increased gate stack capacitance after thermal treatments. (C) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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