Curie temperature and carrier concentration gradients in epitaxy-grown Ga1-xMnxAs layers

被引：29

作者：

Koeder, A ^{[1
]}

Frank, S

Schoch, W

Avrutin, V

Limmer, W

Thonke, K

Sauer, R

Waag, A

Krieger, M

Zuern, K

Ziemann, P

Brotzmann, S

Bracht, H

机构：

[1] Univ Ulm, Abt Halbleiterphys, D-89069 Ulm, Germany

[2] Univ Ulm, Abt Festkorperphys, D-89069 Ulm, Germany

[3] Univ Munster, Inst Mat Phys, D-48149 Munster, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 19期

关键词：

D O I：

10.1063/1.1573369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on detailed investigations of the electronic and magnetic properties of ferromagnetic Ga1-xMnxAs layers, which have been fabricated by low-temperature molecular-beam epitaxy. Superconducting quantum interference device measurements reveal a decrease of the Curie temperature from the surface to the Ga1-xMnxAs/GaAs interface. While high-resolution x-ray diffraction clearly shows a homogeneous Mn distribution, a pronounced decrease of the carrier concentration from the surface towards the Ga1-xMnxAs/GaAs interface has been found by Raman spectroscopy as well as electrochemical capacitance-voltage profiling. The gradient in Curie temperature seems to be a general feature of Ga1-xMnxAs layers grown at low temperature. Possible explanations are discussed. (C) 2003 American Institute of Physics.

引用

页码：3278 / 3280

页数：3

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