Photo-electrochemical properties of Cd1-xHgxSe thin films

被引：11

作者：

Bhuse, V. M. ^{[1
]}

机构：

[1] Govt Rajaram Coll, Dept Chem, Kolhapur, Maharashtra, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2007年 / 106卷 / 2-3期

关键词：

chalcogenides; chemical synthesis; electron microscopy; electrochemical properties;

D O I：

10.1016/j.matchemphys.2007.05.043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Photo-electrochemical studies on chemically deposited Cd-1-xHgxSe thin films (0 <= x <= 1) have been carried out to assess its suitability for use in conversion of solar energy to electrical energy. The PEC cell with Cd-1-xHgxSe thin films as photoanode and sulphide-polysulphide (0.5 M) solution as electrolyte have been constructed and investigated for various cell parameters as a function of photoelectrode composition parameter (x). The film with composition x = 0.4 (Cd0.6Hg0.4Se) showed enhanced solar to electrical conversion efficiency (eta) and fill factor (ff). The observed enhancement has been correlated to decrease in photoelectrode resistance and band gap (E-g). The addition of Hg in CdSe, to certain limit, showed better performance and stability of the cell. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：250 / 255

页数：6

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