Charge collection inefficiencies induced by intense 12C bombardment of SSB detectors

被引：1

作者：

Aguilera, EF ^{[1
]}

Rosales, P

Ramírez-Jiménez, FJ

机构：

[1] Inst Nacl Invest Nucl, Dept Acelerador, Mexico City 11801, DF, Mexico

[2] Univ Autonoma Estado Mexico, Toluca 50000, Mexico

[3] Inst Nacl Invest Nucl, Dept Elect, Mexico City 11801, DF, Mexico

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2005年 / 52卷 / 05期

关键词：

ion fluence; pulse height defect; Rutherford backscattering; silicon detector;

D O I：

10.1109/TNS.2005.856754

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental data are presented showing that, for a light heavy ion such as Carbon, large collection-efficiency losses appear in Silicon Surface Barrier detectors for large enough ion fluences. This effect, apparently related to the onset of radiation damage of the detector, shows an S-shape behavior with the fluence above threshold.

引用

页码：1785 / 1791

页数：7

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