Chemical vapor deposition of gallium selenide and indium selenide nanoparticles

被引：48

作者：

Stoll, SL ^{[1
]}

Gillan, EG ^{[1
]}

Barron, AR ^{[1
]}

机构：

[1] RICE UNIV,DEPT MECH ENGN & MAT SCI,HOUSTON,TX 77005

来源：

CHEMICAL VAPOR DEPOSITION | 1996年 / 2卷 / 05期

关键词：

D O I：

10.1002/cvde.19960020506

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Communication: Nanometer-sized structures can exhibit quite different properties from those of their macroscopic forms. In this paper it is reported that, under suitable conditions. well-defined nanoparticles of InSe and GaSe may be obtained from the vapor phase thermolysis of heterocubane molecules. For example, InSe grown from [(EtMe(2)C)InSe](4) consists of spheres with a mean diameter of 88 nm (standard deviation s.d. = 30 nm), while GaSe grown front [((t)Bu)GaSe](4) produces pseudo-spherical nanoparticles with a mean diameter of 42 nm (s.d. = 13 nm). Possible controlling mechanisms are discussed.

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页码：182 / &

页数：4

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