High resistivity and ultrafast carrier lifetime in argon implanted GaAs

被引：10

作者：

Walukiewicz, W ^{[1
]}

LilientalWeber, Z ^{[1
]}

Jasinski, J ^{[1
]}

Almonte, M ^{[1
]}

Prasad, A ^{[1
]}

Haller, EE ^{[1
]}

Weber, ER ^{[1
]}

Grenier, P ^{[1
]}

Whitaker, JF ^{[1
]}

机构：

[1] UNIV MICHIGAN,CTR ULTRAFAST OPT SCI,ANN ARBOR,MI 48109

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 17期

关键词：

D O I：

10.1063/1.117702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the optoelectronic and structural properties of GaAs that has been implanted with Ar ions and subsequently annealed, The material exhibits all the basic optical and electronic characteristics typically observed in nonstoichiometric. As implanted or low-temperature-grown GaAs. Annealing of Ar implanted GaAs at 600 degrees C produces a highly resistive material with a subpicosecond trapping lifetime for photoexcited carriers. Transmission electron microscopy shows that, instead of As precipitates, characteristic for the nonstoichiometeric GaAs, voids ranging in size from 3 to 5 nm are observed in Ar implanted and annealed GaAs. (C) 1996 American Institute of Physics.

引用

页码：2569 / 2571

页数：3

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