High output power 1540nm vertical cavity semiconductor optical amplifiers

被引：10

作者：

Björlin, ES ^{[1
]}

Kimura, T ^{[1
]}

Chen, Q ^{[1
]}

Wang, C ^{[1
]}

Bowers, JE ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 02期

关键词：

D O I：

10.1049/el:20040097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical cavity semiconductor optical amplifiers operating at 1540 nm are presented. The use of AlInGaAs multiple quantum well active regions resulted in record-high saturation output power of +0.5 dBm and 16 dB of fibre-to-fibre gain. These results were achieved in reflection mode operation using optical pumping by a 980 nm semiconductor laser.

引用

页码：121 / 123

页数：3

共 5 条

[1] Long wavelength vertical-cavity semiconductor optical amplifiers [J].

Björlin, ES ;

Riou, B ;

Abraham, P ;

Piprek, J ;

Chiu, YJ ;

Black, KA ;

Keating, A ;

Bowers, JE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (02) :274-281

[2]

BJORLIN ES, 2002, IND PHOSPH REL MAT C, P307

[3]

Calvez S, 2003, ELECTRON LETT, V39, P100, DOI [10.1049/el:20030119, 10.1049/el.-20030119]

[4] GAAIAS/GAAS ACTIVE-FILTER BASED ON VERTICAL CAVITY SURFACE EMITTING LASER [J].

KOYAMA, F ;

KUBOTA, S ;

IGA, K .

ELECTRONICS LETTERS, 1991, 27 (12) :1093-1095

[5] Experimental demonstration of a multifunctional long-wavelength vertical-cavity laser amplifier-detector [J].

Lewen, R ;

Streubel, K ;

Karlsson, A ;

Rapp, S .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (08) :1067-1069

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