GAAIAS/GAAS ACTIVE-FILTER BASED ON VERTICAL CAVITY SURFACE EMITTING LASER

被引：9

作者：

KOYAMA, F

KUBOTA, S

IGA, K

机构：

[1] Tokyo Institute of Technology Precision & Intelligence Lab., Midori-ku, Yokohama, Nagatsuta 4259

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 12期

关键词：

SEMICONDUCTOR LASERS; OPTICAL FILTERS; INTEGRATED OPTICS;

D O I：

10.1049/el:19910679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel active filter based on a vertical cavity surface emitting laser is demonstrated. A 3 dB filter bandwidth as narrow as 0.08 nm was obtained. A polarisation independent and ultralow power consumption device is expected with 2-D array configuration.

引用

收藏

页码：1093 / 1095

页数：3

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