POLARIZATION CHARACTERISTICS OF MOCVD GROWN GAAS GAALAS CBH SURFACE EMITTING LASERS

被引：35

作者：

SHIMIZU, M

KOYAMA, F

IGA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 09期

关键词：

D O I：

10.1143/JJAP.27.1774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1774 / 1775

页数：2

共 3 条

[1] ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS/GAAS SURFACE EMITTING JUNCTION LASER
IGA, K
ISHIKAWA, S
OHKOUCHI, S
NISHIMURA, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) : 663 - 668
[2] Iga K., 1985, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE68, P91
[3] GAALAS/GAAS MOCVD GROWTH FOR SURFACE EMITTING LASER
KOYAMA, F
UENOHARA, H
SAKAGUCHI, T
IGA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (07): : 1077 - 1081