GAALAS/GAAS MOCVD GROWTH FOR SURFACE EMITTING LASER

被引：18

作者：

KOYAMA, F

UENOHARA, H

SAKAGUCHI, T

IGA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 07期

关键词：

D O I：

10.1143/JJAP.26.1077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1077 / 1081

页数：5

共 13 条

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