ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS/GAAS SURFACE EMITTING JUNCTION LASER GROWN BY MBE

被引:3
作者
IGA, K [1 ]
NISHIMURA, T [1 ]
YAGI, K [1 ]
YAMAGUCHI, T [1 ]
NIINA, T [1 ]
机构
[1] SANYO ELECT CO LTD,RES CTR,HIRAKATA,OSAKA 573,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 06期
关键词
D O I
10.1143/JJAP.25.924
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:924 / 925
页数:2
相关论文
共 3 条
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IGA, K ;
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NISHIMURA, T .
APPLIED PHYSICS LETTERS, 1984, 45 (04) :348-350
[2]  
IGA K, 1985, IEEE J QUANTUM ELECT, V20, P663
[3]   GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].
SODA, H ;
IGA, K ;
KITAHARA, C ;
SUEMATSU, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) :2329-2330