Nano-phase SBT-family ferroelectric memories

被引：154

作者：

Scott, JF ^{[1
]}

Alexe, M ^{[1
]}

Zakharov, ND ^{[1
]}

Pignolet, A ^{[1
]}

Curran, C ^{[1
]}

Hesse, D ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-01620 Halle, Saale, Germany

来源：

INTEGRATED FERROELECTRICS | 1998年 / 21卷 / 1-4期

关键词：

nano-phase; SET; memories;

D O I：

10.1080/10584589808202046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent studies have produced 0.1 x 0.1 mu m ferroelectric cells in both bismuth titanate and strontium bismuth tantalate, thus taking thin-film ferroelectric memories into the regime of nanoscale (100 nm or less) devices. A review is presented of deposition, switching, and leakage current in these devices, which are small enough to permit 1 Gbit memories on a standard Si chip.

引用

页码：1 / 14

页数：14

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