1.5 μm electroluminescence from organic light emitting diodes integrated on silicon substrates

被引：21

作者：

Curry, RJ

Gillin, WP

Knights, AP

Gwilliam, R

机构：

[1] Univ London Queen Mary & Westfield Coll, Dept Phys, London E1 4NS, England

[2] Univ Surrey, Sch EEITM, Guildford GU2 7RX, Surrey, England

来源：

OPTICAL MATERIALS | 2001年 / 17卷 / 1-2期

关键词：

erbium; electroluminescence; organic diode; laser;

D O I：

10.1016/S0925-3467(01)00077-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have produced a silicon based organic light emitting diode (OLED) which emits 1.5 mum electroluminescence at room temperature. The emitting layer used was erbium tris(8-hydroxyquinoline) and energy is transferred from excitons formed on the organic ligands into the erbium ion. Characteristic emission is observed through the silicon substrate at 1.5 pm due to the I-4(13/2) to I-4(15/2) iatra-atomic transition. Whilst the device is not suited to conventional OLED applications, due to the long lifetime of the I-4(13/2) to I-4(15/2) transition, it is a significant step towards the development of a 1.5 mum laser which can be integrated onto a silicon waveguide. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：161 / 163

页数：3

共 10 条

[1] 1.54 μm electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes [J].