Well-aligned Mn-doped ZnO nanowires synthesized by a chemical vapor deposition method

被引：90

作者：

Liu, JJ ^{[1
]}

Yu, MH ^{[1
]}

Zhou, WL ^{[1
]}

机构：

[1] Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 17期

关键词：

D O I：

10.1063/1.2084321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Well-aligned diluted magnetic semiconductor Zn1-xMnxO nanowires have been fabricated at 850 degrees C from a self-formed ZnO substrate using a chemical vapor deposition method. The as-synthesized Mn-doped ZnO nanowires were characterized by field emission scanning electron microscopy and transmission electron microscopy (TEM). The well-aligned nanowires are single crystalline and are perpendicularly grown along the c axis. Electron energy x-ray dispersive analysis, x-ray diffraction spectrometry, and TEM analysis clearly showed that Mn was doped both in the ZnO nanowires and substrate. Ferromagnetic ordering of the as-synthesized Zn1-xMnxO nanowire arrays was observed at 5 K with Curie temperature of 44 K by superconducting quantum interference device measurement. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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