Metamorphic GaInP/GaInAs/Ge solar cells

被引：21

作者：

King, RR ^{[1
]}

Haddad, M ^{[1
]}

Isshiki, T ^{[1
]}

Colter, P ^{[1
]}

Ermer, J ^{[1
]}

Yoon, H ^{[1
]}

Joslin, DE ^{[1
]}

Karam, NH ^{[1
]}

机构：

[1] Spectrolab Inc, Sylmar, CA 91342 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916050

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

High-efficiency, metamorphic multijunction cells have been fabricated by growing GaInP/GaInAs subcells that are lattice-mismatched to an active Ge substrate, resulting in GaInP/GaInAS/Ge 3-junction (3J) cells. The efficiency dependence of this 3J cell on lattice-constant of the top two cells and on sublattice ordering in the GaInP top cell is presented. A variety of composition-graded buffers have been explored through X-ray diffraction reciprocal space mapping to measure strain in the cell layers, and transmission electron microscopy to minimize misfit and threading dislocations. Quantum efficiency is measured for metamorphic 1.3-eV Ga0.92In0.08As (8%-In GaInAs) cells and 1.75-eV Ga0.43In0.57P cells grown on a Ge substrate, as well as for the 3J cell based on 4%-In GaInAs. Three-junction Ga0.43In0.57P/Ga0.92In0.08As/Ge cells with 0.50% lattice-mismatch to the Ge substrate are measured to have AM0 efficiency of 27.3% (0.1353 W/cm(2), 28 degreesC), similar to high-efficiency, conventional GaInP/GaAs/Ge 3-junction cells based on the GaAs lattice constant.

引用

页码：982 / 985

页数：4

共 10 条

[1]

[Anonymous], P 22 IEEE PHOT SPEC

[2] MOVPE grown Ga1-xInxAs solar cells for GaInP/GaInAs tandem applications [J].