Effective potentials and the onset of quantization in ultrasmall MOSFETs

被引:45
作者
Ferry, DK [1 ]
机构
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
基金
美国国家科学基金会;
关键词
device simulation; quantum effects; transport; effective potential;
D O I
10.1006/spmi.2000.0943
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The connection between the minimum size of an electron wavepacket, and the introduction of an effective potential is discussed. The effective potential approach has a long history of use in trying to transition the gap between classical mechanics and quantum mechanics. An effective potential is one in which the quasi-classical regime is approximated through a density which arises from the effective potential W(x) through exp[-betaW(x)]. The generation of the effective potential W(x) gives the effects of the onset of quantization in the system. Tn this paper, we study the use of the effective potential in a triangular well formed between the oxide and the depletion field of the semiconductor. We determine the quantization energy of the carriers in the potential well and their mean set-back from the interface. Finally, we show the connection between the effective potential and the Bohm-derived quantum potentials that have become of interest in simulations. (C) 2000 Academic Press.
引用
收藏
页码:419 / 423
页数:5
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