Electrical characterisation and reliability of HfO2 and Al2O3-HfO2 MIM capacitors

被引：61

作者：

Mondon, F

Blonkowski, S

机构：

[1] CEA DRT LETI, F-38054 Grenoble 9, France

[2] J Fourier Univ, F-38041 Grenoble, France

[3] STMicroelect, F-38926 Crolles, France

来源：

MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 08期

关键词：

D O I：

10.1016/S0026-2714(03)00181-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current leakage and breakdown of MIM capacitors using HfO2 and Al2O3-HfO2 stacked layers were studied. Conduction in devices based upon HfO2 layers thinner than 8 nm is probably dominated by tunnelling. Al2O3-HfO2 stacked layers provide a limited benefit only in term of breakdown field. Constant-voltage wear-out of samples using insulating layer thicker than 6 nm is dominated by a very fast increase of the leakage current. A two step mechanism involving the generation of a conduction path followed by a destructive thermal effect is proposed to explain breakdown mechanism. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1259 / 1266

页数：8

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