Better bottom contact properties in organic field-effect transistors with ultrathin layers

被引:44
作者
Muck, T [1 ]
Fritz, J [1 ]
Wagner, V [1 ]
机构
[1] Jacobs Univ Bremen, Sch Sci & Engn, D-28759 Bremen, Germany
关键词
D O I
10.1063/1.1944224
中图分类号
O59 [应用物理学];
学科分类号
摘要
Organic field-effect transistors (OFETs) are very promising to realize cheap electronics for mass production. Structuring the electrodes of OFETs directly onto organic semiconductors is often prohibited, while substrates with prepatterned electrodes disturb organic film growths at the electrodes resulting in low contact quality. We report on the observation that thiophene-based ultrathin organic layers, in the monolayer range, exhibit smoother and more uniform growth characteristics close to gold contacts when compared to thicker organic layers. As a result, these ultrathin layers in bottom contact configuration exhibit superior electrical contact properties. (c) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
相关论文
共 13 条
[1]   Phase behavior of α,ω-dihexyl-α-quaterthiophene and ordering on a textured substrate [J].
Amundson, KR ;
Katz, HE ;
Lovinger, AJ .
THIN SOLID FILMS, 2003, 426 (1-2) :140-149
[2]   Close look at charge carrier injection in polymer field-effect transistors [J].
Bürgi, L ;
Richards, TJ ;
Friend, RH ;
Sirringhaus, H .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (09) :6129-6137
[3]  
Horowitz G, 1998, ADV MATER, V10, P365, DOI 10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO
[4]  
2-U
[5]  
KATZ HE, 1998, CHEM MATER, V10, P2
[6]   High-performance bottom electrode organic thin-film transistors [J].
Kymissis, I ;
Dimitrakopoulos, CD ;
Purushothaman, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) :1060-1064
[7]   Optimized sub-micron organic thin-film transistors: the influence of contacts and oxide thickness [J].
Leufgen, M ;
Bass, U ;
Muck, T ;
Borzenko, T ;
Schmidt, G ;
Geurts, J ;
Wagner, V ;
Molenkamp, LW .
SYNTHETIC METALS, 2004, 146 (03) :341-345
[8]   In situ electrical characterization of DH4T field-effect transistors [J].
Muck, T ;
Wagner, V ;
Bass, U ;
Leufgen, M ;
Geurts, J ;
Molenkamp, LW .
SYNTHETIC METALS, 2004, 146 (03) :317-320
[9]  
NECLIUDOV PV, 2000, J APPL PHYS, V88, P11
[10]  
Sze S.M., 2013, SEMICONDUCTOR DEVICE