Infrared induced emission from silicon quantum wires

被引：11

作者：

Bagraev, NT ^{[1
]}

Chaikina, EI

Gehlhoff, W

Klyachkin, LE

Markov, II

Malyarenko, AM

机构：

[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 7-8期

关键词：

Electronic density of states - Electrostatics - Infrared radiation - Light emission - Semiconducting silicon - Semiconductor junctions;

D O I：

10.1016/S0038-1101(98)00004-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Studies of infrared induced emission from the silicon quantum wires, which is due to the formation of a correlation gap in the DOS of degenerate hole gas, ale presented. The quantum wires of this art are created by electrostatic confining potential inside ultra-shallow p(+)n junctions which are realized using controlled surface injection of self-interstitials and vacancies in the process of non-equilibrium boron diffusion. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1199 / 1204

页数：6

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