Quantum-well boron and phosphorus diffusion profiles in silicon

Short-time boron and phosphorus diffusion have been realized in monocrystalline silicon through controlled surface injection of self-interstitials and vacancies. By varying the diffusion temperature and the parameters of the oxide layer on both front and back side it was possible to determine the criteria for the dominance of kick-out and vacancy diffusion mechanism, which were used to identify the conditions leading to parity contribution to the shallow dopant diffusion. The retardation of the diffusion process thus achieved has permitted ultra-shallow diffusion profiles and p-n-junctions with depths that could be controlled over the 5-150 nm range, which consist of longitudinal and lateral heavily doped quantum wells.