Precipitation of Cn and Fe in dislocated floating-zone-grown silicon

Precipitation behaviors of Cu and Fe in dislocated Floating-zone-grown silicon crystals are investigated by means of transmission electron microscopy (TEM) and the electron-beam-induced-current (EBIC) technique. Cu precipitation on dislocations is affected significantly by the cooling rate of a specimen after contamination. Cu develops precipitate colonies at some special sites on dislocations and does not decorate other parts of dislocations if the specimen is cooled slowly. These preferential precipitation sites are suggested to be non-dissociated edge-type dislocation segments. The fast cooling of a specimen leads to that Cu precipitates on all of dislocations. Fe decorates all of dislocations uniformly, irrespective of the cooling rate of a specimen.