CHARGE-STATE-DEPENDENT DIFFUSION AND CARRIER-EMISSION-LIMITED DRIFT OF IRON IN SILICON

被引：36

作者：

HEISER, T ^{[1
]}

MESLI, A ^{[1
]}

机构：

[1] UNIV STRASBOURG 1,DEPT PHYS,F-67070 STRASBOURG,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.68.978

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The behavior of iron in silicon during low-temperature annealing was studied. The influence of electric fields on the underlying defect reactions is detailed. The depth profiles reveal Fe(i) outdiffusion and no precipitation in the bulk up to 470 K. In the presence of electric fields, the kinetics differ considerably and can be understood in terms of carrier-emission-limited iron drift. Consequences of this mechanism are discussed. The outdiffusion and drift data indicate a charge-state-dependent diffusion mechanism, in contrast to the generally accepted lack of any charge-state effect.

引用

收藏

页码：978 / 981

页数：4

相关论文

共 12 条

[1] IRON AND THE IRON-BORON COMPLEX IN SILICON [J].

BROTHERTON, SD ;

BRADLEY, P ;

GILL, A .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1941-1943

[2] METASTABLE-DEFECT BEHAVIOR IN SILICON - CHARGE-STATE-CONTROLLED REORIENTATION OF IRON-ALUMINUM PAIRS [J].

CHANTRE, A ;

BOIS, D .

PHYSICAL REVIEW B, 1985, 31 (12) :7979-7988

[3] THEORY OF DIFFUSION-LIMITED PRECIPITATION [J].

HAM, FS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (04) :335-351

[4] HOW FAR DOES THE CHARGE STATE AFFECT THE IRON BEHAVIOR IN SILICON [J].

HEISER, T ;

MESLI, A .

APPLIED PHYSICS LETTERS, 1991, 58 (20) :2240-2242

[5]

HEISER T, 1991, IN PRESS 16TH P INT

[6] ELECTRONICALLY CONTROLLED REACTIONS OF INTERSTITIAL IRON IN SILICON [J].

KIMERLING, LC ;

BENTON, JL .

PHYSICA B & C, 1983, 116 (1-3) :297-300

[7] DONATION CHARACTERISTICS OF IRON IN SILICON [J].

LEMKE, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01) :215-224

[8] CHARGE-STATE-DEPENDENT IRON PRECIPITATION IN SILICON [J].

MESLI, A ;

HEISER, T ;

AMROUN, N ;

SIFFERT, P .

APPLIED PHYSICS LETTERS, 1990, 57 (18) :1898-1900

[9] DIFFUSION AND ISOMER-SHIFT OF INTERSTITIAL IRON IN SILICON OBSERVED VIA IN-BEAM MOSSBAUER-SPECTROSCOPY [J].

SCHWALBACH, P ;

LAUBACH, S ;

HARTICK, M ;

KANKELEIT, E ;

KECK, B ;

MENNINGEN, M ;

SIELEMANN, R .

PHYSICAL REVIEW LETTERS, 1990, 64 (11) :1274-1277

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842