HOW FAR DOES THE CHARGE STATE AFFECT THE IRON BEHAVIOR IN SILICON

被引：22

作者：

HEISER, T

MESLI, A

机构：

[1] Laboratoire Phase, UPR du CNRS No. 292

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 20期

关键词：

D O I：

10.1063/1.104938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature precipitation of neutral interstitial iron in n-type silicon is investigated by means of photocapacitance measurements. Isothermal kinetics as well as iron depth profiles are observed which agree very well with an outdiffusion mechanism of iron to the sample surface. From these data the diffusion coefficient of neutral iron in silicon could be determined. Comparison with published results on positively charged iron in p-type silicon reveals a higher stability of neutral iron as well as a charge state dependence of its diffusion mechanism.

引用

页码：2240 / 2242

页数：3

共 18 条

[1] METASTABLE-DEFECT BEHAVIOR IN SILICON - CHARGE-STATE-CONTROLLED REORIENTATION OF IRON-ALUMINUM PAIRS [J].