ELECTRONICALLY CONTROLLED REACTIONS OF INTERSTITIAL IRON IN SILICON

[1] BENTON JL, 1982, MATERIALS RES SOC P, V4, P765

[2] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[3] CORBETT JW, 1980, SOL CELLS, V2, P11, DOI 10.1016/0379-6787(80)90093-9

[4] THE PROPERTIES OF IRON IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 669 - 674

[5] GRAFF K, 1981, SEMICONDUCTOR SILICO, P331

[6] RECOMBINATION ENHANCED DEFECT REACTIONS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1391 - 1401

[7] KIMERLING LC, UNPUB

[8] KIMERLING LC, 1981, MAT RES SOC P, V2, P85

[9] KIMERLING LC, 1981, I PHYS C SER, V59, P217

[10] DONATION CHARACTERISTICS OF IRON IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01): : 215 - 224

[1] BENTON JL, 1982, MATERIALS RES SOC P, V4, P765

[2] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[3] CORBETT JW, 1980, SOL CELLS, V2, P11, DOI 10.1016/0379-6787(80)90093-9

[4] THE PROPERTIES OF IRON IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 669 - 674

[5] GRAFF K, 1981, SEMICONDUCTOR SILICO, P331

[6] RECOMBINATION ENHANCED DEFECT REACTIONS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1391 - 1401

[7] KIMERLING LC, UNPUB

[8] KIMERLING LC, 1981, MAT RES SOC P, V2, P85

[9] KIMERLING LC, 1981, I PHYS C SER, V59, P217

[10] DONATION CHARACTERISTICS OF IRON IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01): : 215 - 224