IRON-RELATED DEEP LEVELS IN N-TYPE SILICON

被引：19

作者：

KAKISHITA, K

KAWAKAMI, K

SUZUKI, S

OHTA, E

SAKATA, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.343433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3923 / 3927

页数：5

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