IRON AND THE IRON-BORON COMPLEX IN SILICON

[1] MEASUREMENT OF MINORITY-CARRIER CAPTURE CROSS-SECTIONS AND APPLICATION TO GOLD AND PLATINUM IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1543 - 1553

[2] ELECTRICAL OBSERVATION OF THE AU-FE COMPLEX IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 952 - 956

[3] PHOTOCURRENT DEEP LEVEL TRANSIENT SPECTROSCOPY IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3636 - 3643

[4] BROTHERTON SD, 1983, EUROPHYSICS C F, V7, P158

[5] QUENCHED-IN DEFECT IN BORON-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4821 - 4822

[6] THE PROPERTIES OF IRON IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 669 - 674

[7] ELECTRONICALLY CONTROLLED REACTIONS OF INTERSTITIAL IRON IN SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 297 - 300

[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[9] DONATION CHARACTERISTICS OF IRON IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01): : 215 - 224

[10] OBSERVATION OF LIFETIME CONTROLLING RECOMBINATION CENTERS IN SILICON POWER DEVICES [J]. SOLID-STATE ELECTRONICS, 1980, 23 (02) : 129 - 132

[1] MEASUREMENT OF MINORITY-CARRIER CAPTURE CROSS-SECTIONS AND APPLICATION TO GOLD AND PLATINUM IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1543 - 1553

[2] ELECTRICAL OBSERVATION OF THE AU-FE COMPLEX IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 952 - 956

[3] PHOTOCURRENT DEEP LEVEL TRANSIENT SPECTROSCOPY IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3636 - 3643

[4] BROTHERTON SD, 1983, EUROPHYSICS C F, V7, P158

[5] QUENCHED-IN DEFECT IN BORON-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4821 - 4822

[6] THE PROPERTIES OF IRON IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 669 - 674

[7] ELECTRONICALLY CONTROLLED REACTIONS OF INTERSTITIAL IRON IN SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 297 - 300

[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[9] DONATION CHARACTERISTICS OF IRON IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01): : 215 - 224

[10] OBSERVATION OF LIFETIME CONTROLLING RECOMBINATION CENTERS IN SILICON POWER DEVICES [J]. SOLID-STATE ELECTRONICS, 1980, 23 (02) : 129 - 132