OBSERVATION OF LIFETIME CONTROLLING RECOMBINATION CENTERS IN SILICON POWER DEVICES

被引：9

作者：

PAXMAN, DH

WHIGHT, KR

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 02期

关键词：

D O I：

10.1016/0038-1101(80)90148-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：129 / 132

页数：4

相关论文

共 8 条

[1] CONTROL OF THYRISTOR ELABORATION BY THERMALLY STIMULATED CAPACITANCE - CHARACTERIZATION OF INDUCED RECOMBINATION CENTERS
BARBOLLA, J
BAILON, L
BRABANT, JC
PUGNET, M
BROUSSEAU, M
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1976, 11 (03): : 403 - 408
[2] Brotherton Sarah, COMMUNICATION
[3] ELECTRON-CAPTURE CROSS-SECTION AND ENERGY-LEVEL OF GOLD ACCEPTOR CENTER IN SILICON
BROTHERTON, SD
BICKNELL, J
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 667 - 671
[4] DETERMINATION OF MINORITY-CARRIER LIFETIME FROM REVERSE RECOVERY TRANSIENT OF PNR DIODES
LEWIS, DC
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (01) : 87 - 91
[5] CORRELATION METHOD FOR SEMICONDUCTOR TRANSIENT SIGNAL MEASUREMENTS
MILLER, GL
RAMIREZ, JV
ROBINSON, DAH
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2638 - 2644
[6] PALS JA, 1975, SOLIDST ELECTRON, V17, P1139
[7] POST-INJECTION VOLTAGE DECAY OF P-S-N RECTIFIERS AT HIGH INJECTION LEVELS
SCHLANGENOTTO, H
GERLACH, W
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (04) : 393 - +
[8] QUENCHED-IN CENTERS IN SILICON P+N JUNCTIONS
YAU, LD
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (02) : 193 - 201