CONTROL OF THYRISTOR ELABORATION BY THERMALLY STIMULATED CAPACITANCE - CHARACTERIZATION OF INDUCED RECOMBINATION CENTERS

被引：1

作者：

BARBOLLA, J ^{[1
]}

BAILON, L ^{[1
]}

BRABANT, JC ^{[1
]}

PUGNET, M ^{[1
]}

BROUSSEAU, M ^{[1
]}

机构：

[1] INST NATL SCI APPL, DEPT PHYS, CNRS, PHYS SOLIDES LAB, F-31077 TOULOUSE, FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1976年 / 11卷 / 03期

关键词：

D O I：

10.1051/rphysap:01976001103040300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：403 / 408

页数：6

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[1] PUGNET M, TO BE PUBLISHED
[2] THERMALLY STIMULATED CAPACITANCE (TSCAP) IN P-N-JUNCTIONS
SAH, CT
WALKER, JW
CHAN, WW
FU, HS
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (05) : 193 - &
[3] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS
SAH, CT
REDDI, VGK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 345 - +
[4] EXPERIMENTS ON ORIGIN OF PROCESS-INDUCED RECOMBINATION CENTERS IN SILICON
SAH, CT
WANG, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1767 - 1776
[5] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS
SAH, CT
FORBES, L
ROSIER, LL
TASCH, AF
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +
[6] CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .1. GENERAL THEORY AND APPLICATIONS TO INITIALLY DEPLETED SURFACE WITHOUT SURFACE STATE
SAH, CT
FU, HS
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (01): : 297 - +
[7] QUENCHED-IN CENTERS IN SILICON P+N JUNCTIONS
YAU, LD
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (02) : 193 - 201